or Same Type as D.U.T. 50KΩ 12V .2µF .3µF D.U.T. + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRL3103PbF Pe.

G The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels .

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .

IRL3103

IRL3103D1

IRL3103D1PBF

IRL3103D1S

IRL3103D2

IRL3103D2PBF

IRL3103L

IRL3103LPBF

IRL3103S

IRL3103SPBF

IRL3102

IRL3102PBF

IRL3102S

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